Problem l: The capacitance vs. gate voltage characteristic of a simple MOS capacitor of area 100 μιηχ 1 00pm is as shown: Assume Esi-1 1.9, Eox-3.9, Eo-8.85 >< 10-14 F/cm, and ni-1.5x 1010cm3 C (pF) 70 ECV) 0.25 a) What is the thickness of the gate oxide (Sio2)? b) Does the capacitor have a metal gate or poly-Si gate? Why? c) Is the substrate n-type or p-type? How do you know? d) Estimate the values of VFB and VrH. e) What is the work function of the gate electrode, knowing that the electron affinity for Si is 4.03eV? What is the work function difference of the gate electrode and the substrate (assuming no oxide charge)? Is the measurement frequency low or high? How do you know this? 1D 8) Problem l: The capacitance vs. gate voltage characteristic of a simple MOS capacitor of area 100 μιηχ 1 00pm is as shown: Assume Esi-1 1.9, Eox-3.9, Eo-8.85 >