a. If the sheet resistance of the diffused layer in Q#4 is 2500square, what is its resistivity? b. Design a 2KI resistor using the diffused layer. 4 In the case of limited source diffusion, the surface concentration of Boron is found to be 1.1x1020cm3 and the junction depth is found to be 2.770m after a 5-hour diffusion at 1100°C. Find the background doping of the wafer. 5. a. If the sheet resistance of the diffused layer in Q#4 is 2500ysquare, what is its resistivity? b. Design a 2K resistor using the diffused layer. a. If the sheet resistance of the diffused layer in Q#4 is 2500square, what is its resistivity? b. Design a 2KI resistor using the diffused layer. 4 In the case of limited source diffusion, the surface concentration of Boron is found to be 1.1x1020cm3 and the junction depth is found to be 2.770m after a 5-hour diffusion at 1100°C. Find the background doping of the wafer. 5. a. If the sheet resistance of the diffused layer in Q#4 is 2500ysquare, what is its resistivity? b. Design a 2K resistor using the diffused layer.